A quasi-ballistic drain current, charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime

A quasi-ballistic drain current, charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime

Abstract This paper presents a physically valid quasi-ballistic drain current model applicable for nanoscale symmetric Double Gate (SDG) MOSFETs. The proposed drain current model includes both diffusive and ballistic transport phenomena. The model considers the important positional carrier scatterin...

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Bibliographic Details
Main Authors: Vyas R. Murnal, C. Vijaya
Format: Article
Language:English
Published: SpringerOpen 2019-06-01
Series:Nano Convergence
Subjects:
Ballistic transport
Drift–diffusion
Quasi-ballistic
Scattering
SDG MOSFETs
Online Access:http://link.springer.com/article/10.1186/s40580-019-0189-y

Internet

http://link.springer.com/article/10.1186/s40580-019-0189-y

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