Design and investigation of negative capacitance–based core‐shell dopingless nanotube tunnel field‐effect transistor
Abstract Investigation and analysis of a ferroelectric material–based dopingless nanotube tunnel field‐effect transistor are conducted using a lead zirconate titanate (PZT) gate stack to induce negative capacitance in the device. Landau–Khalatnikov equations are used in deriving the parameter values...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-10-01
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| Series: | IET Circuits, Devices and Systems |
| Online Access: | https://doi.org/10.1049/cds2.12064 |