Structure and transport in high pressure oxygen sputter-deposited BaSnO3−δ
BaSnO3 has recently been identified as a high mobility wide gap semiconductor with significant potential for room temperature oxide electronics. Here, a detailed study of the high pressure oxygen sputter-deposition, microstructure, morphology, and stoichiometry of epitaxial BaSnO3 on SrTiO3(001) and...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-06-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4919969 |