Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

Data are presented on strain compensation in InGaN-based multiple quantum wells (MQW) using AlGaN interlayers (ILs). The MQWs consist of five periods of InxGa1-xN/AlyGa1-yN/GaN emitting in the green (λ ∼ 535 nm ± 15 nm), and the AlyGa1-yN IL has an Al composition of y = 0.42. The IL is varied from 0...

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Bibliographic Details
Main Authors: Syed Ahmed Al Muyeed, Wei Sun, Xiongliang Wei, Renbo Song, Daniel D. Koleske, Nelson Tansu, Jonathan J. Wierer Jr.
Format: Article
Language:English
Published: AIP Publishing LLC 2017-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5000519

Internet

http://dx.doi.org/10.1063/1.5000519

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