Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers
Data are presented on strain compensation in InGaN-based multiple quantum wells (MQW) using AlGaN interlayers (ILs). The MQWs consist of five periods of InxGa1-xN/AlyGa1-yN/GaN emitting in the green (λ ∼ 535 nm ± 15 nm), and the AlyGa1-yN IL has an Al composition of y = 0.42. The IL is varied from 0...
Main Authors: | Syed Ahmed Al Muyeed, Wei Sun, Xiongliang Wei, Renbo Song, Daniel D. Koleske, Nelson Tansu, Jonathan J. Wierer Jr. |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2017-10-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5000519 |
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