Modelling and analysis on short-circuit failure for press-pack IGBT devices used in VSC-HVDC converter

Modelling and analysis on short-circuit failure for press-pack IGBT devices used in VSC-HVDC converter

Press-pack insulated gate bipolar transistor (IGBT) device is the key component in the voltage source converter high voltage direct current (VSC-HVDC) due the advantage of the short-circuit failure. However, it is difficult to analyse the IGBT short-circuit failure mode due to the complex packaging...

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Bibliographic Details
Main Authors: Ran Yao, Hui Li, Wei Lai, Shenyang Kang, Jili Deng, Haiyan Long, Meimei Zheng, Jinyuan Li, Yaosheng Li
Format: Article
Language:English
Published: Wiley 2019-01-01
Series:The Journal of Engineering
Subjects:
HVDC power transmission
HVDC power convertors
failure analysis
bipolar transistor circuits
power transmission reliability
voltage-source convertors
press-pack IGBT device
IGBT short-circuit failure mode
short failure time
short-circuit tests
short-circuit failure position
failure stage
VSC-HVDC converter reliability
voltage 3.3 kV
current 50.0 A
Online Access:https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8668

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https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8668

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