Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells
In this work, we present the investigation of InN/GaN multiple-quantum-well (MQW) growth by plasma-assisted molecular beam epitaxy using in-situ reflection high-energy electron diffraction (RHEED) to monitor the growth process. The analysis of the RHEED intensity and pattern transitions identified a...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2020-05-01
|
| Series: | Materials & Design |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S0264127520300988 |