Origin and Magnitude of ‘Designer’ Spin-Orbit Interaction in Graphene on Semiconducting Transition Metal Dichalcogenides

Origin and Magnitude of ‘Designer’ Spin-Orbit Interaction in Graphene on Semiconducting Transition Metal Dichalcogenides

We use a combination of experimental techniques to demonstrate a general occurrence of spin-orbit interaction (SOI) in graphene on transition metal dichalcogenide (TMD) substrates. Our measurements indicate that SOI is ultrastrong and extremely robust, despite it being merely interfacially induced,...

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Bibliographic Details
Main Authors: Zhe Wang, Dong-Keun Ki, Jun Yong Khoo, Diego Mauro, Helmuth Berger, Leonid S. Levitov, Alberto F. Morpurgo
Format: Article
Language:English
Published: American Physical Society 2016-10-01
Series:Physical Review X
Online Access:http://doi.org/10.1103/PhysRevX.6.041020

Internet

http://doi.org/10.1103/PhysRevX.6.041020

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