A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio
In this paper, a silicon–on–insulator (SOI) p–n–p–n tunneling field–effect transistor (TFET) with a silicon doped hafnium oxide (Si:HfO2) ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band–to–band tunneling model. Utilization of Si:HfO2 ins...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4962969 |