Determination of phonon decay rate in p-type silicon under Fano resonance by measurement of coherent phonons
We determine phonon decay rate by measuring the temperature dependence of coherent phonons in p-type Si under Fano resonance, where there is interference between the continuum and discrete states. As the temperature decreases, the decay rate of coherent phonons decreases, whereas that evaluated from...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4931393 |