Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor

Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor

Abstract For advanced Cu interconnect technology, Co films have been widely investigated to serve as the liner and seed layer replacement because of a better wettability to Cu than Ta. In this article, the Co films are grown by plasma-enhanced atomic layer deposition using Co(EtCp)2 as a precursor,...

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Bibliographic Details
Main Authors: Bao Zhu, Zi-Jun Ding, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang, Shi-Jin Ding
Format: Article
Language:English
Published: SpringerOpen 2019-03-01
Series:Nanoscale Research Letters
Subjects:
Co films
Atomic layer deposition
Low resistivity
Low deposition temperature
Online Access:http://link.springer.com/article/10.1186/s11671-019-2913-2

Internet

http://link.springer.com/article/10.1186/s11671-019-2913-2

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