Influence of the germanium and oxygen impurities on the radiation stability of the silicon
Infrared absorption spectra of the Silicon single-crystals with the Germanium impurity (Ge ≤ 0,7 at. %) after the irradiation by the reactor neutron fluences of 5 · 10 16 n/cm 2 and 5 · 10 19 n/cm 2 are measured. It was shown that the Germanium impurity increases the radiation strength of Cz-Si to t...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2008-08-01
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| Series: | Âderna Fìzika ta Energetika |
| Online Access: | http://jnpae.kinr.kiev.ua/24(2)/Articles_PDF/jnpae-2008-2(24)-0068-Groza.pdf |