Influence of the germanium and oxygen impurities on the radiation stability of the silicon

Influence of the germanium and oxygen impurities on the radiation stability of the silicon

Infrared absorption spectra of the Silicon single-crystals with the Germanium impurity (Ge ≤ 0,7 at. %) after the irradiation by the reactor neutron fluences of 5 · 10 16 n/cm 2 and 5 · 10 19 n/cm 2 are measured. It was shown that the Germanium impurity increases the radiation strength of Cz-Si to t...

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Bibliographic Details
Main Authors: A. A. Groza, V. I. Varnina, P. G. Litovchenko, L. S. Marchenko, M. I. Starchik, L. I. Barabash, S. V. Berdnichenko
Format: Article
Language:English
Published: Institute for Nuclear Research, National Academy of Sciences of Ukraine 2008-08-01
Series:Âderna Fìzika ta Energetika
Online Access:http://jnpae.kinr.kiev.ua/24(2)/Articles_PDF/jnpae-2008-2(24)-0068-Groza.pdf

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