Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature Applications
Within these studies the piezoresistive effect was analyzed for 6H-SiC and 4H-SiC material doped with various elements: N, B, and Sc. Bulk SiC crystals with a specific concentration of dopants were fabricated by the Physical Vapor Transport (PVT) technique. For such materials, the structures and pro...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-09-01
|
| Series: | Sensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1424-8220/21/18/6066 |