Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature Applications

Within these studies the piezoresistive effect was analyzed for 6H-SiC and 4H-SiC material doped with various elements: N, B, and Sc. Bulk SiC crystals with a specific concentration of dopants were fabricated by the Physical Vapor Transport (PVT) technique. For such materials, the structures and pro...

Full description

Bibliographic Details
Main Authors:	Tomasz Wejrzanowski, Emil Tymicki, Tomasz Plocinski, Janusz Józef Bucki, Teck Leong Tan
Format:	Article
Language:	English
Published:	MDPI AG 2021-09-01
Series:	Sensors
Subjects:	SiC piezoresistive effect high temperature pressure sensor gauge factor
Online Access:	https://www.mdpi.com/1424-8220/21/18/6066

id	doaj-5e549862010f474ba26ec81afef2098c
record_format	Article
spelling	doaj-5e549862010f474ba26ec81afef2098c2021-09-26T01:22:19ZengMDPI AGSensors1424-82202021-09-01216066606610.3390/s21186066Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature ApplicationsTomasz Wejrzanowski0Emil Tymicki1Tomasz Plocinski2Janusz Józef Bucki3Teck Leong Tan4Faculty of Materials Science and Engineering, Warsaw University of Technology, Woloska 141, 02 507 Warsaw, PolandŁukasiewicz Research Network—Institute of Microelectronics and Photonics, Al. Lotników 32/46, 02-668 Warsaw, PolandFaculty of Materials Science and Engineering, Warsaw University of Technology, Woloska 141, 02 507 Warsaw, PolandFaculty of Materials Science and Engineering, Warsaw University of Technology, Woloska 141, 02 507 Warsaw, PolandInstitute of High Performance Computing, Agency of Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, SingaporeWithin these studies the piezoresistive effect was analyzed for 6H-SiC and 4H-SiC material doped with various elements: N, B, and Sc. Bulk SiC crystals with a specific concentration of dopants were fabricated by the Physical Vapor Transport (PVT) technique. For such materials, the structures and properties were analyzed using X-ray diffraction, SEM, and Hall measurements. The samples in the form of a beam were also prepared and strained (bent) to measure the resistance change (Gauge Factor). Based on the results obtained for bulk materials, piezoresistive thin films on 6H-SiC and 4H-SiC substrate were fabricated by Chemical Vapor Deposition (CVD). Such materials were shaped by Focus Ion Beam (FIB) into pressure sensors with a specific geometry. The characteristics of the sensors made from different materials under a range of pressures and temperatures were obtained and are presented herewith.https://www.mdpi.com/1424-8220/21/18/6066SiCpiezoresistive effecthigh temperature pressure sensorgauge factor
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Tomasz Wejrzanowski Emil Tymicki Tomasz Plocinski Janusz Józef Bucki Teck Leong Tan
spellingShingle	Tomasz Wejrzanowski Emil Tymicki Tomasz Plocinski Janusz Józef Bucki Teck Leong Tan Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature Applications Sensors SiC piezoresistive effect high temperature pressure sensor gauge factor
author_facet	Tomasz Wejrzanowski Emil Tymicki Tomasz Plocinski Janusz Józef Bucki Teck Leong Tan
author_sort	Tomasz Wejrzanowski
title	Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature Applications
title_short	Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature Applications
title_full	Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature Applications
title_fullStr	Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature Applications
title_full_unstemmed	Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature Applications
title_sort	design of sic-doped piezoresistive pressure sensor for high-temperature applications
publisher	MDPI AG
series	Sensors
issn	1424-8220
publishDate	2021-09-01
description	Within these studies the piezoresistive effect was analyzed for 6H-SiC and 4H-SiC material doped with various elements: N, B, and Sc. Bulk SiC crystals with a specific concentration of dopants were fabricated by the Physical Vapor Transport (PVT) technique. For such materials, the structures and properties were analyzed using X-ray diffraction, SEM, and Hall measurements. The samples in the form of a beam were also prepared and strained (bent) to measure the resistance change (Gauge Factor). Based on the results obtained for bulk materials, piezoresistive thin films on 6H-SiC and 4H-SiC substrate were fabricated by Chemical Vapor Deposition (CVD). Such materials were shaped by Focus Ion Beam (FIB) into pressure sensors with a specific geometry. The characteristics of the sensors made from different materials under a range of pressures and temperatures were obtained and are presented herewith.
topic	SiC piezoresistive effect high temperature pressure sensor gauge factor
url	https://www.mdpi.com/1424-8220/21/18/6066
work_keys_str_mv	AT tomaszwejrzanowski designofsicdopedpiezoresistivepressuresensorforhightemperatureapplications AT emiltymicki designofsicdopedpiezoresistivepressuresensorforhightemperatureapplications AT tomaszplocinski designofsicdopedpiezoresistivepressuresensorforhightemperatureapplications AT januszjozefbucki designofsicdopedpiezoresistivepressuresensorforhightemperatureapplications AT teckleongtan designofsicdopedpiezoresistivepressuresensorforhightemperatureapplications
_version_	1716869069553008640

Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature Applications

Similar Items