Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature Applications
Within these studies the piezoresistive effect was analyzed for 6H-SiC and 4H-SiC material doped with various elements: N, B, and Sc. Bulk SiC crystals with a specific concentration of dopants were fabricated by the Physical Vapor Transport (PVT) technique. For such materials, the structures and pro...
Main Authors: | Tomasz Wejrzanowski, Emil Tymicki, Tomasz Plocinski, Janusz Józef Bucki, Teck Leong Tan |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-09-01
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Series: | Sensors |
Subjects: | |
Online Access: | https://www.mdpi.com/1424-8220/21/18/6066 |
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