DETECTORS BASED ON Cd(Zn)Te SEMICONDUCTORS FOR X-RAY AND GAMMA RADIATION REGISTRATION

DETECTORS BASED ON Cd(Zn)Te SEMICONDUCTORS FOR X-RAY AND GAMMA RADIATION REGISTRATION

This work presents the guidance on the results of the development of a laser doping technique and the creation of diode structures based on Cd(Zn)Te semiconductors, due to its attractive physical characteristics. The elements of this compound have relatively large atomic numbers, a significant cross...

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Bibliographic Details
Main Author: Levytskyi S.
Format: Article
Language:English
Published: National Academy of Sciences of Ukraine, Institute of Environmental Geochemistry 2020-09-01
Series:Геохімія техногенезу
Subjects:
cdte
cdznte
laser irradiation
doping
barrier structure
p-n junction
diode
Online Access:http://znp.igns.gov.ua/en/4-32-8-detectors-based-on-cd-zn-te-semiconductors-for-x-ray-and-gamma-radiation-registration/

Internet

http://znp.igns.gov.ua/en/4-32-8-detectors-based-on-cd-zn-te-semiconductors-for-x-ray-and-gamma-radiation-registration/

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