Insertion of a Graphene Oxide Layer into a Cu/SiO<sub>2</sub>/Pt Structure to Overcome Performance Degradation in a Vaporless Environment
A Cu/SiO<sub>2</sub>/Pt structure is usually used to study the resistive memory properties of an electrochemical resistive random access memory. It can be reversibly switched between low- and high-resistance states by using DC voltages in the atmosphere. However, its resistive switching...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-04-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/9/7/1432 |