Room-Temperature Fabricated Thin-Film Transistors Based on Compounds with Lanthanum and Main Family Element Boron

Room-Temperature Fabricated Thin-Film Transistors Based on Compounds with Lanthanum and Main Family Element Boron

For the first time, compounds with lanthanum from the main family element Boron (LaBx) were investigated as an active layer for thin-film transistors (TFTs). Detailed studies showed that the room-temperature fabricated LaBx thin film was in the crystalline state with a relatively narrow optical band...

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Bibliographic Details
Main Authors: Peng Xiao, Junhua Huang, Ting Dong, Jianing Xie, Jian Yuan, Dongxiang Luo, Baiquan Liu
Format: Article
Language:English
Published: MDPI AG 2018-06-01
Series:Molecules
Subjects:
LaBx
thin film transistors
low temperature
field effect
flexible
Online Access:http://www.mdpi.com/1420-3049/23/6/1373

Internet

http://www.mdpi.com/1420-3049/23/6/1373

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