Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device in which P3HT-PCBM acts as an organic heteroj...

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Bibliographic Details
Main Authors: Harshada Patil, Honggyun Kim, Shania Rehman, Kalyani D. Kadam, Jamal Aziz, Muhammad Farooq Khan, Deok-kee Kim
Format: Article
Language:English
Published: MDPI AG 2021-02-01
Series:Nanomaterials
Subjects:
P3HT-PCBM
solution-processed
multilevel resistive switching
filament formation
Online Access:https://www.mdpi.com/2079-4991/11/2/359

Internet

https://www.mdpi.com/2079-4991/11/2/359

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