Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically, we analyzed three different structures grown on silicon su...

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Bibliographic Details
Main Authors: Alaleh Tajalli, Matteo Borga, Matteo Meneghini, Carlo De Santi, Davide Benazzi, Sven Besendörfer, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Riad Kabouche, Idriss Abid, Elke Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso
Format: Article
Language:English
Published: MDPI AG 2020-01-01
Series:Micromachines
Subjects:
gallium nitride (gan) high-electron-mobility transistors (hemts)
vertical breakdown voltage
buffer trapping effect
Online Access:https://www.mdpi.com/2072-666X/11/1/101

Internet

https://www.mdpi.com/2072-666X/11/1/101

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