Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111)

Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111)

<p>Abstract</p> <p>A series of 3C-SiC films have been grown by a novel method of solid&#8211;gas phase epitaxy and studied by Raman scattering and scanning electron microscopy (SEM). It is shown that during the epitaxial growth in an atmosphere of CO, 3C-SiC films of high cryst...

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Bibliographic Details
Main Authors: Kukushkin SA, Osipov AV, Feoktistov NA, Grudinkin SA, Perova TS, Wasyluk J
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
3C-SiC
Voids in SiC
Micro-Raman spectroscopy
Micro-Raman mapping
Online Access:http://dx.doi.org/10.1007/s11671-010-9670-6

Internet

http://dx.doi.org/10.1007/s11671-010-9670-6

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