Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET

Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET

The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of temperatures (25–125 °C). A similar temperature dependen...

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Bibliographic Details
Main Authors: Soohyun Kim, Jungchun Kim, Doyoung Jang, Romain Ritzenthaler, Bertrand Parvais, Jerome Mitard, Hans Mertens, Thomas Chiarella, Naoto Horiguchi, Jae Woo Lee
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Applied Sciences
Subjects:
GAA NW-FET
FinFET
temperature dependence
effective mobility
surface roughness scattering
Online Access:https://www.mdpi.com/2076-3417/10/8/2979

Internet

https://www.mdpi.com/2076-3417/10/8/2979

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