The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga<sub>2</sub>O<sub>3</sub> Substrate for Vertical Light Emitting Diodes

The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga<sub>2</sub>O<sub>3</sub> Substrate for Vertical Light Emitting Diodes

We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga<sub>2</sub>O<sub>3</sub> substrate via the SiO<sub>2</sub> nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga<sub>2</sub>O<sub>3<...

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Bibliographic Details
Main Authors: Jie Zhao, Weijiang Li, Lulu Wang, Xuecheng Wei, Junxi Wang, Tongbo Wei
Format: Article
Language:English
Published: MDPI AG 2021-02-01
Series:Photonics
Subjects:
(-201) β-Ga<sub>2</sub>O<sub>3</sub> substrate
nanorod
quantum confined Stark effect
light extraction efficiency
vertical light emitting diodes
Online Access:https://www.mdpi.com/2304-6732/8/2/42

Internet

https://www.mdpi.com/2304-6732/8/2/42

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