| Summary: | We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga<sub>2</sub>O<sub>3</sub> substrate via the SiO<sub>2</sub> nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga<sub>2</sub>O<sub>3</sub> can effectively suppress quantum confined Stark effect (QCSE) compared to planar LED on account of the strain relaxation. With the enhancement of excitation power density, the photoluminescence (PL) peak shows a large blue-shift for the planar LED, while for the nanorod LED, the peak position shift is small. Furthermore, the simulations also show that the light extraction efficiency (LEE) of the nanorod LED is approximately seven times as high as that of the planar LED. Obviously, the InGaN/GaN/β-Ga<sub>2</sub>O<sub>3</sub> nanorod LED is conducive to improving the optical performance relative to planar LED, and the present work may lay the groundwork for future development of the GaN-based vertical light emitting diodes (VLEDs) on β-Ga<sub>2</sub>O<sub>3</sub> substrate.
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