The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga2O3 Substrate for Vertical Light Emitting Diodes

We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga2O3 substrate via the SiO2 nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga2O3<...

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Main Authors:	Jie Zhao, Weijiang Li, Lulu Wang, Xuecheng Wei, Junxi Wang, Tongbo Wei
Format:	Article
Language:	English
Published:	MDPI AG 2021-02-01
Series:	Photonics
Subjects:	(-201) β-Ga<sub>2</sub>O<sub>3</sub> substrate nanorod quantum confined Stark effect light extraction efficiency vertical light emitting diodes
Online Access:	https://www.mdpi.com/2304-6732/8/2/42

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record_format	Article
spelling	doaj-5fd41bcb83e64ece8093654f2fb433502021-02-07T00:02:05ZengMDPI AGPhotonics2304-67322021-02-018424210.3390/photonics8020042The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga<sub>2</sub>O<sub>3</sub> Substrate for Vertical Light Emitting DiodesJie Zhao0Weijiang Li1Lulu Wang2Xuecheng Wei3Junxi Wang4Tongbo Wei5State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaWe fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga<sub>2</sub>O<sub>3</sub> substrate via the SiO<sub>2</sub> nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga<sub>2</sub>O<sub>3</sub> can effectively suppress quantum confined Stark effect (QCSE) compared to planar LED on account of the strain relaxation. With the enhancement of excitation power density, the photoluminescence (PL) peak shows a large blue-shift for the planar LED, while for the nanorod LED, the peak position shift is small. Furthermore, the simulations also show that the light extraction efficiency (LEE) of the nanorod LED is approximately seven times as high as that of the planar LED. Obviously, the InGaN/GaN/β-Ga<sub>2</sub>O<sub>3</sub> nanorod LED is conducive to improving the optical performance relative to planar LED, and the present work may lay the groundwork for future development of the GaN-based vertical light emitting diodes (VLEDs) on β-Ga<sub>2</sub>O<sub>3</sub> substrate.https://www.mdpi.com/2304-6732/8/2/42(-201) β-Ga<sub>2</sub>O<sub>3</sub> substratenanorodquantum confined Stark effectlight extraction efficiencyvertical light emitting diodes
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Jie Zhao Weijiang Li Lulu Wang Xuecheng Wei Junxi Wang Tongbo Wei
spellingShingle	Jie Zhao Weijiang Li Lulu Wang Xuecheng Wei Junxi Wang Tongbo Wei The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga<sub>2</sub>O<sub>3</sub> Substrate for Vertical Light Emitting Diodes Photonics (-201) β-Ga<sub>2</sub>O<sub>3</sub> substrate nanorod quantum confined Stark effect light extraction efficiency vertical light emitting diodes
author_facet	Jie Zhao Weijiang Li Lulu Wang Xuecheng Wei Junxi Wang Tongbo Wei
author_sort	Jie Zhao
title	The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga<sub>2</sub>O<sub>3</sub> Substrate for Vertical Light Emitting Diodes
title_short	The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga<sub>2</sub>O<sub>3</sub> Substrate for Vertical Light Emitting Diodes
title_full	The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga<sub>2</sub>O<sub>3</sub> Substrate for Vertical Light Emitting Diodes
title_fullStr	The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga<sub>2</sub>O<sub>3</sub> Substrate for Vertical Light Emitting Diodes
title_full_unstemmed	The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga<sub>2</sub>O<sub>3</sub> Substrate for Vertical Light Emitting Diodes
title_sort	optical properties of ingan/gan nanorods fabricated on (-201) β-ga<sub>2</sub>o<sub>3</sub> substrate for vertical light emitting diodes
publisher	MDPI AG
series	Photonics
issn	2304-6732
publishDate	2021-02-01
description	We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga<sub>2</sub>O<sub>3</sub> substrate via the SiO<sub>2</sub> nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga<sub>2</sub>O<sub>3</sub> can effectively suppress quantum confined Stark effect (QCSE) compared to planar LED on account of the strain relaxation. With the enhancement of excitation power density, the photoluminescence (PL) peak shows a large blue-shift for the planar LED, while for the nanorod LED, the peak position shift is small. Furthermore, the simulations also show that the light extraction efficiency (LEE) of the nanorod LED is approximately seven times as high as that of the planar LED. Obviously, the InGaN/GaN/β-Ga<sub>2</sub>O<sub>3</sub> nanorod LED is conducive to improving the optical performance relative to planar LED, and the present work may lay the groundwork for future development of the GaN-based vertical light emitting diodes (VLEDs) on β-Ga<sub>2</sub>O<sub>3</sub> substrate.
topic	(-201) β-Ga<sub>2</sub>O<sub>3</sub> substrate nanorod quantum confined Stark effect light extraction efficiency vertical light emitting diodes
url	https://www.mdpi.com/2304-6732/8/2/42
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The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga<sub>2</sub>O<sub>3</sub> Substrate for Vertical Light Emitting Diodes

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