Electric and dielectric characteristics of Al/ZrO2/IL/n-Si MOS capacitors using three-frequency correction method
In this study, MOS capacitors of Al/ZrO2/IL/n-Si (IL: interface layer) have been fabricated. Bias scan and frequency scan data of measured parallel capacitance (Cm) and parallel resistance (Rm) have been taken in the frequency of ∼1 kHz to 2 MHz. To correct external frequency dispersion of parasitic...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2019-03-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379718328274 |