Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-depende...

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Bibliographic Details
Main Authors: Joung-min Cho, Yuto Akiyama, Tomoyuki Kakinuma, Takehiko Mori
Format: Article
Language:English
Published: AIP Publishing LLC 2013-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4828415