Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport
We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-depende...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2013-10-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4828415 |