Results and limits in the 1-D analytical modeling for the asymmetric DG SOI MOSFET
This paper presents the results and the limits of 1-D analytical modeling of electrostatic potential in the low-doped p type silicon body of the asymmetric n-channel DG SOI MOSFET, where the contribution to the asymmetry comes only from p- and n-type doping of polysilicon used as the gate electrodes...
| Main Authors: | , |
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| Format: | Article |
| Language: | deu |
| Published: |
Copernicus Publications
2008-05-01
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| Series: | Advances in Radio Science |
| Online Access: | http://www.adv-radio-sci.net/6/151/2008/ars-6-151-2008.pdf |