Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE) a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky barrier height and ideality factor a...

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Bibliographic Details
Main Authors: Moonsang Lee, Thi Kim Oanh Vu, Kyoung Su Lee, Eun Kyu Kim, Sungsoo Park
Format: Article
Language:English
Published: MDPI AG 2018-06-01
Series:Nanomaterials
Subjects:
nanodot
a-plane GaN
HVPE
Schottky diodes
Online Access:http://www.mdpi.com/2079-4991/8/6/397

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http://www.mdpi.com/2079-4991/8/6/397

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