Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Based Ternary Combinational Logic Circuits

Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Based Ternary Combinational Logic Circuits

The capability of multiple valued logic (MVL) circuits to achieve higher storage density when compared to that of existing binary circuits is highly impressive. Recently, MVL circuits have attracted significant attention for the design of digital systems. Carbon nanotube field effect transistors (CN...

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Bibliographic Details
Main Authors: Furqan Zahoor, Fawnizu Azmadi Hussin, Farooq Ahmad Khanday, Mohamad Radzi Ahmad, Illani Mohd Nawi, Chia Yee Ooi, Fakhrul Zaman Rokhani
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Electronics
Subjects:
multiple valued logic (MVL)
resistive random access memory (RRAM)
carbon nanotube field effect transistor (CNTFET)
ternary logic systems
emerging technologies
Online Access:https://www.mdpi.com/2079-9292/10/1/79

Internet

https://www.mdpi.com/2079-9292/10/1/79

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