Nanoseconds Switching Time Monitoring of Insulated Gate Bipolar Transistor Module by Under-Sampling Reconstruction of High-Speed Switching Transitions Signal
An insulated gate bipolar transistor (IGBT) is one of the most reliable critical components in power electronics systems (PESs). The switching time during IGBT turn-on/off transitions is a good health status indicator for IGBT. However, online monitoring of IGBT switching time is still difficult in...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2019-10-01
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Series: | Electronics |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-9292/8/10/1203 |