Nanoseconds Switching Time Monitoring of Insulated Gate Bipolar Transistor Module by Under-Sampling Reconstruction of High-Speed Switching Transitions Signal
An insulated gate bipolar transistor (IGBT) is one of the most reliable critical components in power electronics systems (PESs). The switching time during IGBT turn-on/off transitions is a good health status indicator for IGBT. However, online monitoring of IGBT switching time is still difficult in...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-10-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/8/10/1203 |