Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure
In order to reduce the dislocation density and improve the performance of high indium content In0.82Ga0.18As films, the design of double buffer layers has been introduced into the In0.82Ga0.18As/InP heterostructure. Compared with other buffer layer structures, we introduce an InP thin layer, which i...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2017-05-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2073-4352/7/6/155 |