Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼10%) GeSn on insulator enhanced by weak laser irradiation

Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼10%) GeSn on insulator enhanced by weak laser irradiation

Low temperature (<200 oC) crystallization of GeSn (substitutional Sn concentration: >8%) on insulating substrates is essential to realize next generation flexible electronics. To achieve this, a growth method of high quality GeSn films on insulating substrates by combination of laser irradiati...

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Bibliographic Details
Main Authors: Kenta Moto, Takayuki Sugino, Ryo Matsumura, Hiroshi Ikenoue, Masanobu Miyao, Taizoh Sadoh
Format: Article
Language:English
Published: AIP Publishing LLC 2017-07-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4993220

Internet

http://dx.doi.org/10.1063/1.4993220

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