Re-examination of effects of ALD high-k materials on defect reduction in SiGe metal–oxide–semiconductor interfaces

We study the impact of the atomic layer deposition high-k gate insulators on metal–oxide–semiconductor (MOS) interface properties of Si0.78Ge0.22 gate stacks with TiN gate electrodes and the physical origins of the reduction in MOS interface defects. The SiGe MOS interface properties of TiN/Y2O3, Al...

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Bibliographic Details
Main Authors: Tsung-En Lee, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi
Format: Article
Language:English
Published: AIP Publishing LLC 2021-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0061573