Re-examination of effects of ALD high-k materials on defect reduction in SiGe metal–oxide–semiconductor interfaces
We study the impact of the atomic layer deposition high-k gate insulators on metal–oxide–semiconductor (MOS) interface properties of Si0.78Ge0.22 gate stacks with TiN gate electrodes and the physical origins of the reduction in MOS interface defects. The SiGe MOS interface properties of TiN/Y2O3, Al...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0061573 |