Modeling and PSPICE simulation of NBTI effects in VDMOS transistors
In this paper the results of modeling and simulation of NBTI effects in p-channel power VDMOS transistor have been presented. Based on the experimental results, the threshold voltage shifts and changes of transconductance during the NBT stress have been modeled and implemented in the PSP...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Faculty of Technical Sciences in Cacak
2015-01-01
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| Series: | Serbian Journal of Electrical Engineering |
| Subjects: | |
| Online Access: | http://www.doiserbia.nb.rs/img/doi/1451-4869/2015/1451-48691501069M.pdf |