Multi-Chip IGBT Module Failure Monitoring Based on Module Transconductance with Temperature Calibration
The Insulated Gate Bipolar Transistor (IGBT) is the component with the highest failure rate in power converters, and its reliability is a critical issue in power electronics. IGBT module failure is largely caused by solder layer fatigue or bond wires fall-off. This paper proposes a multi-chip IGBT m...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-09-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/9/10/1559 |