Atomic Layer Deposition (ALD) of Metal Gates for CMOS
The continuous down-scaling of complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been suffering two fateful technical issues, one relative to the thinning of gate dielectric and the other to the aggressive shortening of channel in last 20 years. To solve the first is...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-06-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/9/11/2388 |