TID Circuit Simulation in Nanowire FETs and Nanosheet FETs
In this study, the effects of the total ionizing dose (TID) on a nanowire (NW) field-effect transistor (FET) and a nanosheet (NS) FET were analyzed. The devices have Gate-all-around (GAA) structure that are less affected by TID effects because GAA structures have better gate controllability than pre...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-04-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/8/956 |