Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation

Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation

Abstract Point defects in SiC are an attractive platform for quantum information and sensing applications because they provide relatively long spin coherence times, optical spin initialization, and spin-dependent fluorescence readout in a fabrication-friendly semiconductor. The ability to precisely...

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Bibliographic Details
Main Authors: Shojan P. Pavunny, Andrew L. Yeats, Hunter B. Banks, Edward Bielejec, Rachael L. Myers-Ward, Matthew T. DeJarld, Allan S. Bracker, D. Kurt Gaskill, Samuel G. Carter
Format: Article
Language:English
Published: Nature Publishing Group 2021-02-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-021-82832-x

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https://doi.org/10.1038/s41598-021-82832-x

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