High <italic>f<sub>max</sub></italic> × <italic>L<sub>G</sub></italic> Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate
In this letter, we successfully demonstrated a AlGaN/GaN high-electron mobility transistor on silicon substrate with high product of maximum oscillation frequency (f<sub>max</sub>) and gate length (L<sub>G</sub>) by reducing the gate resistance (R<sub>g</sub>) usi...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9066980/ |