Full-Field Strain Mapping at a Ge/Si Heterostructure Interface
The misfit dislocations and strain fields at a Ge/Si heterostructure interface were investigated experimentally using a combination of high-resolution transmission electron microscopy and quantitative electron micrograph analysis methods. The type of misfit dislocation at the interface was determine...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2013-05-01
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Series: | Materials |
Subjects: | |
Online Access: | http://www.mdpi.com/1996-1944/6/6/2130 |