Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

The misfit dislocations and strain fields at a Ge/Si heterostructure interface were investigated experimentally using a combination of high-resolution transmission electron microscopy and quantitative electron micrograph analysis methods. The type of misfit dislocation at the interface was determine...

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Bibliographic Details
Main Authors: Buwen Cheng, Shaojian Su, Yongming Xing, Jijun Li, Chunwang Zhao
Format: Article
Language:English
Published: MDPI AG 2013-05-01
Series:Materials
Subjects:
misfit dislocation
strain
Ge/Si heterostructure
geometric phase analysis
peak pairs analysis
Online Access:http://www.mdpi.com/1996-1944/6/6/2130

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http://www.mdpi.com/1996-1944/6/6/2130

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