Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001)

Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001)

We report on the effects of light depolarization induced by sharp metallic tips in Tip-Enhanced Raman Spectroscopy (TERS). Experiments on Si(001) and GaAs(001) crystals show that the excitation field depolarization induces a selective enhancement of specific Raman modes, depending on their Raman ten...

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Bibliographic Details
Main Authors: P. G. Gucciardi, J.-C. Valmalette, M. Lopes, R. Deturche, M. Lamy de la Chapelle, D. Barchiesi, F. Bonaccorso, C. D'Andrea, M. Chaigneau, G. Picardi, R. Ossikovski
Format: Article
Language:English
Published: Accademia Peloritana dei Pericolanti 2011-09-01
Series:Atti della Accademia Peloritana dei Pericolanti : Classe di Scienze Fisiche, Matematiche e Naturali
Online Access:http://dx.doi.org/10.1478/C1V89S1P042

Internet

http://dx.doi.org/10.1478/C1V89S1P042

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