Robust Simulation of a TaO Memristor Model
This work presents a continuous and differentiable approximation of a Tantalum oxide memristor model which is suited for robust numerical simulations in software. The original model was recently developed at Hewlett Packard labs on the basis of experiments carried out on a memristor manufactured in...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Spolecnost pro radioelektronicke inzenyrstvi
2015-06-01
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| Series: | Radioengineering |
| Subjects: | |
| Online Access: | http://www.radioeng.cz/fulltexts/2015/15_02_0384_0392.pdf |