Unraveling the origin of resistive switching behavior in organolead halide perovskite based memory devices
This study investigates the operation mechanisms of organolead halide perovskite based resistive memory cells and explores the device architectures that could ensure high memory endurance and high fabrication reproducibility. By introducing thin polyethyleneimine (PEI) interfacial layers to separate...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5130914 |