Compliance-Free ZrO2/ZrO2 − x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour

Compliance-Free ZrO2/ZrO2 − x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour

Abstract A controllable transformation from interfacial to filamentary switching mode is presented on a ZrO2/ZrO2 − x /ZrO2 tri-layer resistive memory. The two switching modes are investigated with possible switching and transformation mechanisms proposed. Resistivity modulation of the ZrO2 − x laye...

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Bibliographic Details
Main Authors: Ruomeng Huang, Xingzhao Yan, Sheng Ye, Reza Kashtiban, Richard Beanland, Katrina A. Morgan, Martin D. B. Charlton, C. H. (Kees) de Groot
Format: Article
Language:English
Published: SpringerOpen 2017-06-01
Series:Nanoscale Research Letters
Subjects:
Resistive random access memory
Interfacial switching
Multistate
Compliance-free
Online Access:http://link.springer.com/article/10.1186/s11671-017-2155-0

Internet

http://link.springer.com/article/10.1186/s11671-017-2155-0

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