Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing

Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing

Abstract Changes of the defect structure of silicon p-type crystal surface layer under the influence of plastic deformation and high temperature annealing in oxygen atmosphere were investigated by deep-level capacitance-modulation spectroscopy (DLCMS) and IR spectroscopy of molecules and atom vibrat...

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Bibliographic Details
Main Authors: Bohdan Pavlyk, Markiyan Kushlyk, Dmytro Slobodzyan
Format: Article
Language:English
Published: SpringerOpen 2017-05-01
Series:Nanoscale Research Letters
Subjects:
Silicon
Dislocation-related luminescence
High temperature annealing
Thermodonors
Irradiative recombination centers in silicon
Online Access:http://link.springer.com/article/10.1186/s11671-017-2133-6

Internet

http://link.springer.com/article/10.1186/s11671-017-2133-6

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