Synthesizing InxGa1−xAs using molten In and GaAs by the sessile drop method at 400–600 °C
We studied the surface reaction between metallic In and a single-crystal GaAs substrate at 400–600 °C induced by the improved sessile drop method. Studying the surface morphology and microstructure using scanning electron microscopy, we found that many large particles had formed on the GaAs substrat...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-06-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4985133 |