A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET
A novel snapback-free and low turn-off loss reverse-conducting (RC) SOI-LIGBT is proposed and investigated by numerical simulations. An n-MOSFET (M<sub>N2</sub>) is embedded in the anode side of the LIGBT to short the P-anode/N-buffer junction during the turn-off transient, thus allowing...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8823864/ |